| PART |
Description |
Maker |
| 2SB1198 2SB1198K A5800312 2SB1198KQ |
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 500MA I(C) | SC-59
From old datasheet system
Low-frequency Transistor(-80V, -0.5A)
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
Low-frequency Transistor(-80V/ -0.5A)
|
ROHM[Rohm]
|
| 2SA20881 2SB11321 2SB11841 2SB1198K1 2SB12601 2SB1 |
Medium power transistor (?60V, ?0.5A)
Medium Power Transistor (?32V,?1A)
Power Transistor (?60V, ?3A)
Low-frequency Transistor (-80V, -0.5A)
Power Transistor (?80V, ?1A)
Low VCE(sat) Transistor (?20V, ?3A)
Power transistor (?20V, ?2A)
General purpose amplification (?30V, ?1A)
Low frequency amplifier
Medium power transistor (−60V, −0.5A)
|
ROHM[Rohm]
|
| 2SC5434 2SC5434-T1 |
Reduced noise high frequency amplification transistor
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
High-Frequecy Low-Noise Amplifier NPN Transistor(高频低噪声放大器NPN晶体
|
NEC[NEC]
NEC Corp.
|
| 2SA733-X-AE3-R 2SA73305 2SA733L-Q-AE3-R 2SA733L-K- |
LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR 低频功放进步党外延硅晶体
|
UNISONIC TECHNOLOGIES CO LTD
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| 2SC4694 |
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
NPN Epitaxial Planar Silicon Transistor for Low-Frequency General-Purpose Amplifier,Muting Applications(低频通用放大器，噪声抑制应用的NPN硅外延平面型晶体
NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier, Muting Applications
|
Hitachi,Ltd.
Sanyo Electric Co.,Ltd.
|
| 2SC4227 2SC4227NE68130 2SC4227-T1 |
Silicon transistor
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 离散
|
NEC[NEC]
|
| UPA812T-T1 UPA812 UPA812T UPA812TGB-T1 PA812T |
Low Noise, High Frequncy Amplifer NPN Transistor(楂??浣??澹版?澶у?NPN?朵?绠?
Low Noise, High Frequncy Amplifer NPN Transistor(高频低噪声放大器NPN晶体
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD
TRANSISTOR | BJT | PAIR | NPN | 10V V(BR)CEO | 65MA I(C) | SOT-363
|
NEC[NEC]
NEC Corp.
|
| KSC900 KSC900GTA |
NPN Epitaxial Silicon Transistor
Low Frequency & Low Noise Amplifier
|
Fairchild Semiconductor
|
| 2SC4695 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 500MA I(C) | TO-236 晶体管|晶体管|叩| 20V的五（巴西）总裁| 500mA的一（c）|36
NPN Epitaxial Planar Silicon Transistor for Low-Frequency General-Purpose Amplifier,Muting Applications(低频通用放大器，噪声抑制应用的NPN硅外延平面型晶体
NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier, Muting Applications
|
Hitachi,Ltd.
Sanyo Electric Co.,Ltd.
|
| KTB1772 |
General Purpose Transistor
EPITAXIAL PLANAR PNP TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| KTC3535T KTC3531T |
Low Vce(sat) Transistor
LOW FREQUENCY POWER AMP/ CONVERTER ELECTRONIC GOVERNOR APPLICATIONS
|
Korea Electronics (KEC)
KEC(Korea Electronics)
|
| CSB834 CSB834O CSB834Y |
30.000W Low Frequency PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 200 hFE. Complementary CSD880
30.000W Low Frequency PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD880O
30.000W Low Frequency PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD880Y
|
Continental Device India Limited
|
